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參數(shù)資料
| 型號： | AP9918H |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | AP9918H |
AP9918H/J
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
Q
G
, Total Gate Charge (nC)
V
G
I
D
=18A
V
DS
=15V
V
DS
=20V
V
DS
=10V
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
Junction Temperature (
o
C )
50
100
150
V
G
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
(V)
I
F
T
j
=25
o
C
T
j
=150
o
C
10
100
1000
10000
1
5
9
13
V
DS
(V)
17
21
25
29
C
f=1.0MHz
Ciss
Coss
Crss
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| AP9918J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9920GEO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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