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參數(shù)資料
| 型號： | AP9918J |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | AP9918J |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low on-resistance
▼
Capable of 2.5V gate drive
Low drive current
▼
Surface mount package
BV
DSS
R
DS(ON)
I
D
20V
14m
Ω
45A
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=125
℃
I
DM
P
D
@T
C
=25
℃
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
2.6
110
Unit
℃
/W
℃
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
48
0.38
-55 to 150
-55 to 150
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
20
140
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
45
Parameter
Rating
20
Drain-Source Voltage
200227032
AP9918H/J
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
±
12
G
D
S
TO-251(J)
GDS
TO-252(H)
G
D
S
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