- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375353 > AP9918H (ADVANCED POWER ELECTRONICS CORP) N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | AP9918H |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | AP9918H |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.1
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=18A
-
-
14
m
Ω
V
GS
=2.5V, I
D
=9A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=18A
V
DS
=20V, V
GS
=0V
V
DS
=20V ,V
GS
=0V
V
GS
=
I
D
=18A
V
DS
=20V
V
GS
=5V
V
DS
=10V
I
D
=18A
R
G
=3.3
Ω
,
V
GS
=5V
R
D
=0.56
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
-
-
28
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
0.5
-
-
1.2
-
V
S
uA
26
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
1
25
Drain-Source Leakage Current (T
j
=125
o
C)
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
19
1.5
10.5
7.5
83
18
-
-
-
-
-
-
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
23
500
310
125
-
-
-
-
ns
pF
pF
pF
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Test Conditions
V
D
=V
G
=0V , V
S
=1.3V
Min.
-
-
-
Typ.
-
-
-
Max.
45
140
1.3
Units
A
A
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
T
j
=25
℃
, I
S
=45A, V
GS
=0V
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9918H/J
±
12V
±
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP9918J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9920GEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9922EO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926EM-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926GEM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9918J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9920B1 | 制造商:Schneider Electric 功能描述:BATTERY MANAGEMENT SYSTEM F - Bulk |
| AP9920CS | 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:APC Battery Management System Current Sensor 制造商:Schneider Electric 功能描述:APC BATTERY MANAGEMENT CURR - Bulk |
| AP9920CS2000 | 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:APC BATTERY MANAGEMENT CURRENT 制造商:Schneider Electric 功能描述:APC BATTERY MANAGEMENT CURRENT SENSOR - 2000 AMP - Bulk |
| AP9920GEO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。