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參數(shù)資料
| 型號(hào)： | AP9912J |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 90K |
| 代理商： | AP9912J |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.025
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
-
-
85
m
Ω
V
GS
=2.5V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
= ± 12V
I
D
=5A
V
DS
=16V
V
GS
=4.5V
V
DS
=16V
I
D
=5A
R
G
=3.3
Ω
,
V
GS
=4.5V
R
D
=3.2
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
-
-
180
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
0.5
-
-
9
-
-
V
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
1
Drain-Source Leakage Current (T
j
=150
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
25
±100
-
-
-
-
-
-
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
4.3
0.7
2.2
3.1
17.1
13.9
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
2.6
135
75
35
-
-
-
-
ns
pF
pF
pF
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
Min.
-
-
-
Typ.
-
-
-
Max.
10
20
1.2
Units
A
A
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
T
j
=25
℃
, I
S
=10A, V
GS
=0V
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9912H/J
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| AP9915GK | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9915GK | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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