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參數(shù)資料
| 型號： | AP9916J |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 91K |
| 代理商： | AP9916J |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low on-resistance
▼
Capable of 2.5V gate drive
Low drive current
▼
Single Drive Requirement
BV
DSS
R
DS(ON)
I
D
18V
25m
Ω
35A
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=125
℃
I
DM
P
D
@T
C
=25
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
2.5
110
Unit
℃
/W
℃
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
200227032
AP9916H/J
Parameter
Rating
18
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
35
16
90
50
0.4
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
± 12
GDS
TO-252(H)
GD
S
TO-251(J)
G
D
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9918GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
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| AP9918H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9920B1 | 制造商:Schneider Electric 功能描述:BATTERY MANAGEMENT SYSTEM F - Bulk |
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