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參數(shù)資料
| 型號(hào)： | AP9575M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE |
| 中文描述： | P溝道增強(qiáng)型 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP9575M |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-60
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.04
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-4A
-
-
90
m
Ω
V
GS
=-4.5V, I
D
=-3A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-4A
V
DS
=-60V, V
GS
=0V
V
DS
=-48V, V
GS
=0V
V
GS
=±25V
I
D
=-4A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-1A
R
G
=3.3
Ω
,
V
GS
=-10V
R
D
=30
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
-
-
120
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7
-
-
-
18
5
7
12
5
68
32
1745
165
125
-3
-
-1
-25
±
100
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
28
-
-
-
-
-
-
2790
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
Typ.
-
56
Max.
-1.2
-
Units
V
ns
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-2A, V
GS
=0V
I
S
=-4A,
V
GS
=0
V
,
dI/dt=100A/μs
Reverse Recovery Charge
-
146
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
℃
/W when mounted on Min. copper pad.
AP9575M
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