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參數(shù)資料
| 型號： | AP9575M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE |
| 中文描述： | P溝道增強(qiáng)型 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP9575M |
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Lower On-resistance
BV
DSS
R
DS(ON)
I
D
-60V
90m
Ω
-4A
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
50
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
2.5
0.02
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3
Pulsed Drain Current
1
-3.2
-20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
200302041
AP9575M
Rating
-60
±25
-4.0
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
S
S
S
G
D
D
D
D
SO-8
G
D
S
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