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參數(shù)資料
| 型號： | AP9575H |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE |
| 中文描述： | P溝道增強型 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP9575H |
AP9575H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
5
10
15
20
25
30
35
40
45
50
55
0
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
C
=25
o
C
-10V
-6.0V
-5.0V
-4.5V
V
G
=-3.0V
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
C
=150
o
C
-10V
-6.0V
-5.0V
-4.5V
V
G
=-3.0V
80
85
90
95
100
105
3
5
7
9
11
-V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=-9A
T
C
=25
℃
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=-12A
V
G
=-10V
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-
G
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0
0.2
-V
SD
, Source-to-Drain Voltage (V)
0.4
0.6
0.8
1
1.2
1.4
-
S
(
T
j
=25
o
C
T
j
=150
o
C
相關PDF資料 |
PDF描述 |
|---|---|
| AP9575J | P-CHANNEL ENHANCEMENT MODE |
| AP9575M | P-CHANNEL ENHANCEMENT MODE |
| AP9585H | Benchtop Air Ionizer |
| AP9585J | P-CHANNEL ENHANCEMENT MODE |
| AP9585M | P-CHANNEL ENHANCEMENT MODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP9575J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9575M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9576GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9576GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9577GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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