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參數(shù)資料
| 型號： | AP6679S |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE |
| 中文描述： | P溝道增強型 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | AP6679S |
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Lower On-resistance
BV
DSS
R
DS(ON)
I
D
-30V
9m
Ω
-75A
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=100
℃
I
DM
P
D
@T
A
=25
℃
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
1.4
62
Unit
℃
/W
℃
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
89
0.71
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
-50
300
201231031
AP6679S/P
Rating
-30
±25
-75
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GDS
TO-263(S)
GDS
TO-220(P)
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP6679P) are available for low-profile applications.
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| AP6680AGM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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