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參數(shù)資料
| 型號(hào)： | AP6923O |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET |
| 中文描述： | 3500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | AP6923O |
Advanced Power
Electronics Corp.
P-CHANNEL WITH SCHOTTKY DIODE
POWER MOSFET
▼
Low On-Resistance
Fast Switching Characteristic
Included Schottky Diode
BV
DSS
R
DS(ON)
I
D
-20V
50m
Ω
-3.5A
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
KA
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
I
F
I
FM
Pulsed Forward Current
1
(Schottky)
Units
V
V
V
A
A
A
A
A
P
D
@T
A
=25
℃
T
STG
T
J
W
W
Total Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
℃
℃
Symbol
Value
125
125
Unit
℃
/W
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
(MOSFET)
Thermal Resistance Junction-ambient
3
(Schottky)
Max.
Max.
Data and specifications subject to change without notice
Pulsed Drain Current
1
(MOSFET)
Average Forward Current (Schottky)
- 30
1
25
Total Power Dissipation (MOSFET)
1
1
Continuous Drain Current
3
(MOSFET)
Continuous Drain Current
3
(MOSFET)
- 3.5
- 2.8
-55 to 150
-55 to 125
Parameter
Rating
-20
20
± 12
Drain-Source Voltage (MOSFET and Schottky))
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
AP6923O
Thermal Data
Parameter
200131025
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
K
A
A
A
D
S
S
G
TSSOP-8
G
D
S
K
A
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