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參數(shù)資料
| 型號： | AP6924GEY |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
| 中文描述： | 1000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE PACKAGE-6 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | AP6924GEY |
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼
Low On-Resistance
Fast Switching Characteristic
Included Schottky Diode
BV
DSS
R
DS(ON)
I
D
20V
600m
Ω
1A
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
KA
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
I
F
I
FM
Pulsed Forward Current
1
(Schottky)
Units
V
V
V
A
A
A
A
A
P
D
@T
A
=25
℃
T
STG
T
J
W
Total Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
W
℃
℃
Symbol
Value
110
110
Units
℃
/W
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
(MOSFET)
Thermal Resistance Junction-ambient
3
(Schottky)
Max.
Max.
Data and specifications subject to change without notice
Pulsed Drain Current
1
(MOSFET)
Average Forward Current (Schottky)
8
2
Total Power Dissipation (MOSFET)
0.9
0.5
Continuous Drain Current
3
(MOSFET)
Continuous Drain Current
3
(MOSFET)
1
0.8
-55 to 125
-55 to 125
Parameter
Rating
20
20
±6
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
AP6924GEY
0.9
Pb Free Plating Product
Thermal Data
Parameter
200301051
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
GA
A
K
SOT-26
K
A
G
D
S
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