參數(shù)資料
型號(hào)： AP2306N
廠商： Electronic Theatre Controls, Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 3/4頁
文件大?。?/td> 72K
代理商： AP2306N
AP2306N
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
20
40
60
80
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
V
G
=2.5V
4.0V
5.0V
4.5V
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
4.0V
V
G
=2.5V
4.5V
5.0V
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
T
j
=25
o
C
T
j
=150
o
C
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
G
(
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
V
G
=4.5V
I
D
=5.3A
20
40
60
80
100
1
3
5
7
9
11
V
GS
, Gate-to-Source Voltage (V)
R
D
)
I
D
=5.3A
T
A
=25
o
C
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