參數(shù)資料
型號： AP2306N
廠商： Electronic Theatre Controls, Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 2/4頁
文件大小： 72K
代理商： AP2306N
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.1
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5.5A
-
-
27
m
Ω
V
GS
=4.5V, I
D
=5.3A
V
GS
=2.5V, I
D
=2.6A
V
GS
=1.8V, I
D
=1.0A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5.3A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=
I
D
=5.3A
V
DS
=10V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=2
Ω
,
V
GS
=10V
R
D
=15
Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
-
-
32
m
Ω
-
-
-
-
50
90
m
Ω
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
0.5
-
-
-
-
-
-
-
-
-
-
-
1
10
V
S
uA
uA
nA
nC
nC
nC
ns
13
-
-
-
8.7
1.5
3.6
6
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=55
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
-
-
-
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
-
-
14
18.4
2.8
603
144
111
-
-
-
-
-
-
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
trr
Parameter
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/μs
Min.
-
-
Typ.
-
16.8
Max.
1.2
-
Units
V
ns
Forward On Voltage
2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270
℃
/W when mounted on min. copper pad.
AP2306N
± 12
V
±
100
相關(guān)PDF資料
PDF描述
AP34063N8 Universal DC/DC Converter
AP34063N8A Universal DC/DC Converter
AP34063S8 Universal DC/DC Converter
AP34063S8A Universal DC/DC Converter
AP8111 TruBass Audio Enhancement Processor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP23-06S 制造商:Banner Engineering 功能描述:AP23-06S APERTURE Q23 SERIES SHAPE=SLOT SIZE=.060IN
AP2307GN 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2307GN-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline
AP2307GN-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -16V 60MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -16V, 60MOHM, SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -16V, 60MOHM, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-4A, Drain Source Voltage Vds:-16V, On Resistance Rds(on):0.06ohm, Rds(on) Test Voltage Vgs:-4.5V, Power Dissipation Pd:1.38W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -16V, 60MOHM, SOT-23, Transistor Polarity:P Channel, Continuous Dra
AP2307N 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*