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參數(shù)資料
| 型號(hào)： | AP2302DTR-E1 |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | 3A DDR TERMINATION REGULATOR |
| 中文描述： | 第3A DDR終端穩(wěn)壓器 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 166K |
| 代理商： | AP2302DTR-E1 |
3A DDR TERMINATION REGULATOR AP2302
Preliminary Datasheet
8
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 12. Copper Area vs. Power Dissipation
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
100
150
200
250
300
350
C
2
)
Power Dissipation (W)
T
C
=25
T
C
=50
T
C
=65
o
C
o
C
o
C
Package: SOIC-8
No Heatsink
Figure 13. Copper Area vs. Power Dissipation
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
100
150
200
250
300
350
C
2
)
Power Dissipation (W)
T
C
=25
T
C
=50
T
C
=65
o
C
o
C
o
C
Package: TO-252-5L
No Heatsink
Figure 14. Copper Area vs. Power Dissipation
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
100
150
200
250
300
350
C
2
)
Power Dissipation (W)
T
C
=25
T
C
=50
T
C
=65
o
C
o
C
o
C
Package: TO-263-5L
No Heatsink
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP2302M | 3A DDR TERMINATION REGULATOR |
| AP2302M-E1 | 3A DDR TERMINATION REGULATOR |
| AP2302MTR | 3A DDR TERMINATION REGULATOR |
| AP2302MTR-E1 | 3A DDR TERMINATION REGULATOR |
| AP2302S5 | 3A DDR TERMINATION REGULATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2302GN | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2302GN-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V gate drive, Small package outline |
| AP2302L | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302L_06 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302LD- | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
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