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參數(shù)資料
| 型號(hào)： | AP2302DTR-E1 |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | 3A DDR TERMINATION REGULATOR |
| 中文描述： | 第3A DDR終端穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 166K |
| 代理商： | AP2302DTR-E1 |
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3A DDR TERMINATION REGULATOR AP2302
Preliminary Datasheet
6
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics
Figure 6. Threshold Voltage vs. Junction Temperature
Figure 7. Threshold Voltage vs. Junction Temperature
Figure 4. Sourcing Current vs. Junction Temperature
Figure 5. Sinking Current vs. Junction Temperature
-40
-20
0
20
40
60
80
100
120
2
4
6
V
CNTL
=3.3V
V
IN
=2.5V
V
OUT
=1.25V
S
Junction Temperature (
o
C)
-40
-20
0
20
40
60
80
100
120
2
4
6
V
CNTL
=3.3V
V
IN
=2.5V
V
OUT
=1.25V
S
Junction Temperature (
o
C)
-40
-20
0
20
40
60
80
100
120
500
550
600
650
V
CNTL
=3.3V
V
IN
=2.5V
T
Junction Temperature (
o
C)
-40
-20
0
20
40
60
80
100
120
500
550
600
650
V
CNTL
=5.0V
V
IN
=2.5V
T
Junction Temperature (
o
C)
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PDF描述 |
|---|---|
| AP2302M | 3A DDR TERMINATION REGULATOR |
| AP2302M-E1 | 3A DDR TERMINATION REGULATOR |
| AP2302MTR | 3A DDR TERMINATION REGULATOR |
| AP2302MTR-E1 | 3A DDR TERMINATION REGULATOR |
| AP2302S5 | 3A DDR TERMINATION REGULATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2302GN | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2302GN-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V gate drive, Small package outline |
| AP2302L | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302L_06 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302LD- | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
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