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參數(shù)資料
| 型號： | AP2302DTR-E1 |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | 3A DDR TERMINATION REGULATOR |
| 中文描述： | 第3A DDR終端穩(wěn)壓器 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 166K |
| 代理商： | AP2302DTR-E1 |
3A DDR TERMINATION REGULATOR AP2302
Preliminary Datasheet
4
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
Absolute Maximum Ratings (Note 1)
Recommended Operating Conditions
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Parameter
Symbol
Value
Unit
Supply Voltage for Internal Circuit
V
CNTL
7
V
Power Dissipation
P
D
Internally Limited
W
ESD (Human Body Model)
ESD
2
KV
Junction Temperature
T
J
150
o
C
Storage Temperature Range
T
STG
-65 to 150
o
C
Lead Temperature (Soldering, 10sec)
T
LEAD
260
o
C
Package Thermal Resistance (Free Air)
θ
JA
SOIC-8
160
o
C/W
TO-252-5L
130
TO-263-5L
90
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for Internal Circuit
V
CNTL
(Note 2, 3)
3.3
6
V
Power Input
DDR I
V
IN
1.6
2.5
V
CNTL
V
DDR II
1.8
Junction Temperature
T
J
0
125
o
C
Note 2: Keep V
CNTL
Note 3: For safe operation, V
CNTL
MUST be tied to 3.3V rather than 5V.
V
IN
in power on and power off sequences.
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| AP2302GN | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP2302L | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
| AP2302L_06 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:2A DDR TERMINATION REGULATOR |
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