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參數資料
| 型號： | AO4620 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 188K |
| 代理商： | AO4620 |
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VGS=10V, VDS=15V, ID=7.4A
VGS=10V, VDS=15V, RL=2.0, RGEN=3
IF=7.4A, dI/dt=100A/s
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
5
10
15
20
25
30
0
1
2
3
4
5
I D
(A
)
V
DS (Volts)
Figure 1: On-Region Characteristics
V
GS=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
4.5
I D
(A
)
V
GS(Volts)
Figure 2: Transfer Characteristics
15
20
25
30
35
0
5
10
15
20
R
D
S
(O
N
)
(m
)
I
D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
I S
(A
)
V
SD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100 125 150 175
N
o
rm
a
li
ze
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS=10V
V
GS=4.5V
I
D=7.2A
I
D=5A
10
20
30
40
50
60
2
4
6
8
10
R
D
S
(O
N
)
(m
)
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V
DS=5V
V
GS=4.5V
V
GS=10V
I
D=7.2A
25°C
125°C
5V
6V
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AO4620_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4621 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4622 | 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4622_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET |
| AO4624 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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