參數(shù)資料
型號(hào): AO4620
廠商: ALPHA AND OMEGA SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: GREEN, SOIC-8
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 188K
代理商: AO4620
AO4620
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1.5
-2
-3
V
ID(ON)
-30
A
31
36
TJ=125°C
42
48
55
m
gFS
15
S
VSD
-0.77
-1
V
IS
-2.5
A
ISM
-30
A
Ciss
980
1225
pF
Coss
150
pF
Crss
115
pF
Rg
2.2
3.3
Qg(10V)
18.7
24
nC
Qg(4.5V)
9.6
nC
Qgs
3.2
nC
Qgd
4.8
nC
tD(on)
7.7
ns
tr
6
ns
tD(off)
20
ns
tf
7
ns
trr
21
26
ns
Qrr
13
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=-10V, VDS=-5V
VGS=-10V, ID=-5.6A
Reverse Transfer Capacitance
IF=-5.6A, dI/dt=100A/s
P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-5.6A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=-250A
VDS=-30V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
VGS=-4.5V, ID=-4.5A
IS=-1A,VGS=0V
VDS=-5V, ID=-6A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=2.7,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-15V, ID=-5.6A
Pulsed Body-Diode Current
B
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A=25°C. The SOA curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: Oct 2010
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4710 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4800B 6900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4812 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4813 7100 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4822 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4620_12 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4621 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4622 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道(雙) FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時(shí)的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO4622_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET
AO4624 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor