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參數(shù)資料
| 型號(hào)： | AN957 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Measuring HEXFETCharacteristics |
| 中文描述： | 測量HEXFETCharacteristics |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 235K |
| 代理商： | AN957 |
AN-957
(v.Int)
POSITION
MEASUREMENT
COMMENT
1
I
GSS
C sense disconnected, Drain Source S/C connected, Collector Voltage applied to
gate via 330
resistor. Note: Gate protected by back to back 30V zeners.
2
R
DS(on)
Collector Voltage applied to DrainBased Voltage applied to Gate via 330
resistor.
3
B
VDSS
/ I
DSS
/ V
DS
Collector Voltage applied to Drain, Gate Source S/C connected via 330
resistor.
4
V
GS(th)
Collector Voltage applied to Drain, Gate Drain S/C connected via 330
resistor.
Related topics:
Parameter definition in IGBTs
Gate Charge
Thermal characteristics
ESD sensitivity
ESD test methods
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