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| 型號(hào)： | AN957 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Measuring HEXFETCharacteristics |
| 中文描述： | 測(cè)量HEXFETCharacteristics |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | AN957 |
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AN-957
(v.Int)
Figure 22.
Test circuit for gate charge
Figure 25.
Test fixture for HEXFET test
Q
g
= (t
3
- t
0
) i
g
,
Q
gd
= (t
2
- t
1
) i
g
,
Q
gs
= Q
g
- Q
gd
V
SD
Body-Drain Diode Voltage Drop
The current source may consist or a voltage
source and a series resistor, as shown in Figure
24.
The voltage should be applied in short pulses
(less than 300 microsec) with a low duty cycle
(less than 2%).
t
rr
, Q
rr
Body-Drain Diode Reverse Recovery Time and Reverse Recovery Charge
Several test circuits are commonly used to charac-terize these parameters. Some have been qualified by JEDEC. The data sheet
indicates the test method used for the specific device.
12. A fixture to speed-up
testing time
The most commonly tested
parameters in a MOS-
gated transistor are gate-
source
leakage
drain-source
(R
DS(on)
),
voltage (BV
DSS
), drain
current
(I
DSS
),
drain
voltage
(I
GSS
),
resistance
breakdown
source-
(V
SD
),
threshold (V
GS(th)
), and so
on. These tests can be
greatly simplifyed with the
fixture shown in Figure25.
S
D
G
1.5mA
OSCILLOSCOPE
V
DS
≤
0.8 x 200V
I
D
V
GS
10V
V
2
V
1
t
0
t
1
t
2
t
3
t
OSCILLOSCOPE
or DVM
S
D
G
I
S
330
G
30V
30V
S
D
SENSE
S
SENSE
1
2
3
4
1
2
3
4
1
2
3
4
C
SENSE
E
SENSE
C
B
E
TO CURVE TRACER
TO PVT
Figure 24.
Test circuit MOSFET diode drop
Figure 23.
Gate charge waveforms
To Order
Index
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