- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375316 > AN101 (Vishay Intertechnology,Inc.) Circular Connector; No. of Contacts:3; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-98 RoHS Compliant: No PDF資料下載
參數(shù)資料
| 型號： | AN101 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:3; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-98 RoHS Compliant: No |
| 中文描述： | MOSFET的 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | AN101 |
AN101
Siliconix
10-Mar-97
5
There are three types of small-signal MOSFETs. First, we
have the planar, lateral MOSFET, similar to that shown in
Figure 6a. By virtue of the n-doped channel spanning
from source to drain, it performs as an n-channel deple-
tion-mode MOSFET in a fashion not unlike that of the
depletion-mode JFET when a voltage of the correct polar-
ity is applied to the gate, as in Figure 6b. However, if we
forward-bias the gate (that is, place a gate voltage whose
polarity equals the drain voltage polarity) additional elec-
trons will be attracted to the region beneath the gate, fur-
ther enhancing – and inverting (from p to n) the region.
As the channel region thickens, the channel resistance
will further decrease, allowing greater channel current to
flow beyond that identified as I
DSS
, as we see in the family
of output characteristics in Figure 6c.
MOSFETs can also be constructed for enhancement-
mode-only performance, as shown in Figure 7. Unlike the
depletion-mode device, the enhancement-mode MOSFET
offers no channel between the source and drain. Not until a
forward bias on the gate enhances a channel by attracting
electrons beneath the gate oxide will current begin to flow
(Figure 6d).
ééééééééééééé
ééééééééééééé
N
Body
Source
Drain
Gate
P-Silicon
Figure 7.
Planar Enhancement-Mode MOS Cross-Section
A newer MOSFET offering superior performance is the
lateral double-diffused or DMOS FET. Because of the li-
mitations of photo-lithographic masking, the earlier, old-
er-style MOSFET was severely limited in performance.
Some of these former limitations involved switching
speeds, channel conductivity (too high an r
DS
), and cur-
rent handling in general. The lateral DMOS FET removed
these limitations, offering a viable alternative between
the JFET and the GaAs FET for video and high-speed
switching applications.
The lateral DMOS FET differs radically in its channel
construction when compared with the older planar MOS-
FET. Note the double-diffused source implant into the im-
planted p-doped channel region, shown in Figure 8. The
improved performance of DMOS is a result of both the
precisely-defined short channel that results and the “drift
region” resulting from the remaining p-doped silicon
body and light n-doped ion implant.
Gate
Metal
Substrate
P-Silicon
P
ééééééééééééé
ééééééééééééé
N+
Drain
Source
N+
N–
Figure 8.
Planar Enhancement-Mode DMOS
Although Figures 7 and 8 illustrate n-channel enhance-
ment-mode DMOS FETs, by reversing the doping se-
quences, p-channel DMOS FETs can easily be fabricated.
Furthermore, by lightly doping across the short channel
and drift region, depletion-mode DMOS FETs can be
constructed.
As a result of the short channel, the MOSFET is allowed
to operate in “velocity saturation” and as a result of the
drift region, the MOSFET offers higher operating volt-
ages. Together, the short channel and the drift region offer
low on-resistance and low interelectrode capacitances,
especially gate-to-drain, V
GD
.
Velocity saturation coupled with low interelectrode ca-
pacitance offers us high-speed and high-frequency per-
formance.
ééééé
P+
Drain
Source
Gate
Metal
P+
ééé
N+
N–
N–
Figure 9.
Vertical N-Channel Enhancement-Mode
DMOS FET
The novelty of the short-channel DMOS FET led to the
evolution of a yet more advanced, higher-voltage, higher-
current MOSFET: the Vertical Double-Diffused MOSFET
(Figure 9). Where this vertical MOSFET offers improved
power-handling capabilities, its fundamental shortcoming is
that because of its construction and to a lesser extent because
of its size, it fails to challenge the high-speed performance
of the lateral DMOS FET. Consequently, the vertical and lat-
eral DMOS FETs complement each other in a wide selection
of applications.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AN104 | AN104 |
| AN105 | FETS AS VOLTAGE-CONTROLLED RESISTORS |
| AN1201SM | Polarity inverting charge pump DC/DC converter IC |
| AN1324 | Circular Connector; No. of Contacts:4; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-44 RoHS Compliant: No |
| AN1324NS | Circular Connector; No. of Contacts:6; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-6 RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AN-101(FC67200) | 制造商:SPC Multicomp 功能描述:CIRCUIT BREAKER 1A 制造商:SPC Multicomp 功能描述:CIRCUIT BREAKER, 1A 制造商:SPC Multicomp 功能描述:CIRCUIT BREAKER, 1A; Voltage Rating V AC:250V; Current Rating:1A; No. of Poles:1; SVHC:No SVHC (19-Dec-2012); Breaking Capacity Current AC:20A; External Depth:6mm; External Length / Height:22mm; External Width:12.6mm; Fixing Centres ;RoHS Compliant: Yes |
| AN101006 | 制造商:AN# - MILITARY 功能描述: |
| AN101-01 | 制造商:SMC Corporation of America 功能描述:Silencer, pneumatic, general purpose, 1/8 in. port, 16dB 制造商:SMC 功能描述:TCT Bulk 制造商:SMC 功能描述:Bronze sintered silencer, R1/8 |
| AN101101 | 功能描述:工業(yè)移動(dòng)感應(yīng)器和位置傳感器 80DEG ILAPS ANGULAR LINEAR POS. RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor |
| AN10-12A | 制造商:AN# - MILITARY 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。