- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375316 > AN101 (Vishay Intertechnology,Inc.) Circular Connector; No. of Contacts:3; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-98 RoHS Compliant: No PDF資料下載
參數(shù)資料
| 型號： | AN101 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:3; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-98 RoHS Compliant: No |
| 中文描述： | MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | AN101 |
AN101
Siliconix
10-Mar-97
1
An Introduction to FETs
Introduction
The basic principle of the field-effect transistor (FET) has
been known since J. E. Lilienfeld’s patent of 1925. The
theoretical description of a FET made by Shockley in
1952 paved the way for development of a classic electron-
ic device which provides the designer the means to ac-
complish nearly every circuit function. At one time, the
field-effect transistor was known as a “unipolar” transis-
tor. The term refers to the fact that current is transported
by carriers of one polarity (majority), whereas in the con-
ventional bipolar transistor carriers of both polarities
(majority and minority) are involved.
This Application Note provides an insight into the nature of
the FET, and touches briefly on its basic characteristics, ter-
minology, parameters, and typical applications.
The following list of FET applications indicates the ver-
satility of the FET family:
Amplifiers
Small Signal
Low Distortion
High Gain
Low Noise
Switches
Chopper-Type
Analog Gate
Communicator
Protection Diodes
Low-leakage
Selectivity
DC
High-Frequency
Current Limiters
Voltage-Controlled Resistors
Mixers
Oscillators
The family tree of FET devices (Figure 1) may be divided
into two main branches, Junction FETs (JFETs) and Insu-
lated Gate FETs (or MOSFETs, metal-oxide- semicon-
ductor field-effect transistors). Junction FETs are in-
herently depletion-mode devices, and are available in
both n- and p-channel configurations. MOSFETs are
available in both enhancement and depletion modes, and
also exist as both n- and p-channel devices. The two main
FET groups depend on different phenomena for their op-
eration, and will be discussed separately.
Junction FETs
In its most elementary form, this transistor consists of a
piece of high-resistivity semiconductor material (usually
silicon) which constitutes a channel for the majority carri-
er flow. The magnitude of this current is controlled by a
voltage applied to a gate, which is a reverse-biased pn
junction formed along the channel. Implicit in this de-
scription is the fundamental difference between JFET and
bipolar devices: when the JFET junction is reverse-biased
the gate current is practically zero, whereas the base cur-
rent of the bipolar transistor is always some value greater
than zero. The JFET is a high-input resistance device,
while the input resistance of the bipolar transistor is com-
paratively low. If the channel is doped with a donor impu-
rity, n-type material is formed and the channel current
will consist of electrons. If the channel is doped with an
acceptor impurity, p-type material will be formed and the
channel current will consist of holes. N-channel devices
have greater conductivity than p-channel types, since
electrons have higher mobility than do holes; thus n-chan-
nel JFETs are approximately twice as efficient conductors
compared to their p-channel counterparts.
FETs
Junction
MOS
Depletion
Enhancement
Not Possible
Depletion
Enhancement
n
p
n
p
n
p
Figure 1.
FET Family Tree
Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70594.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AN104 | AN104 |
| AN105 | FETS AS VOLTAGE-CONTROLLED RESISTORS |
| AN1201SM | Polarity inverting charge pump DC/DC converter IC |
| AN1324 | Circular Connector; No. of Contacts:4; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-44 RoHS Compliant: No |
| AN1324NS | Circular Connector; No. of Contacts:6; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-6 RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AN-101(FC67200) | 制造商:SPC Multicomp 功能描述:CIRCUIT BREAKER 1A 制造商:SPC Multicomp 功能描述:CIRCUIT BREAKER, 1A 制造商:SPC Multicomp 功能描述:CIRCUIT BREAKER, 1A; Voltage Rating V AC:250V; Current Rating:1A; No. of Poles:1; SVHC:No SVHC (19-Dec-2012); Breaking Capacity Current AC:20A; External Depth:6mm; External Length / Height:22mm; External Width:12.6mm; Fixing Centres ;RoHS Compliant: Yes |
| AN101006 | 制造商:AN# - MILITARY 功能描述: |
| AN101-01 | 制造商:SMC Corporation of America 功能描述:Silencer, pneumatic, general purpose, 1/8 in. port, 16dB 制造商:SMC 功能描述:TCT Bulk 制造商:SMC 功能描述:Bronze sintered silencer, R1/8 |
| AN101101 | 功能描述:工業(yè)移動感應(yīng)器和位置傳感器 80DEG ILAPS ANGULAR LINEAR POS. RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor |
| AN10-12A | 制造商:AN# - MILITARY 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。