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參數(shù)資料
| 型號： | AN101 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:3; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-98 RoHS Compliant: No |
| 中文描述： | MOSFET的 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | AN101 |
AN101
4
Siliconix
10-Mar-97
MOSFETs
The metal-oxide-semiconductor FET (MOSFET) depends
on the fact that it is not actually necessary to form a semi-
conductor junction on the channel of a FET to achieve gate
control of the channel current. On a MOSFET, the metallic
or polysilicon gate is isolated from the channel by a thin lay-
er of silicon dioxide (Figure 6a). Although the bottom of the
insulating layer is in contact with the p-type silicon sub-
strate, the physical processes which occur at this interface
dictate that free electrons will accumulate in the interface,
inverting the p-type material and spontaneously forming an
n-type channel. Thus, a conduction path exists between the
diffused n-type channel source and drain regions.
There are, however, some fundamental performance dif-
ferences between MOSFETs and JFETS. JFETs, by na-
ture, operate only in the depletion mode. That is, a reverse
gate bias depletes, or pinches off the flow of channel cur-
rent. A MOSFET, by virtue of its electrically-insulated
gate, can be fabricated to perform as either a depletion-
mode or enhancement-mode FET. Quite unlike the JFET,
a depletion-mode MOSFET will also perform as an en-
hancement-mode FET.
While the great majority of JFETs operate as described in
Figures 3 and 4, MOSFETs can assume several forms and
operate in either the depletion/enhancement-mode or en-
hancement-mode only.
–
I
D
V
DS
– Drain-Source Voltage (V)
N
N
S
D
Insulating
Layer
G
P
Substrate
Metal
Ohmic Region Characteristics
200
0
0.4
0.8
1.2
1.6
2.0
160
120
80
40
0
0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1 V
V
GS
= 0.2 V
+
–
I
D
I
D
V
DS
D
S
G
V
GS
–
I
D
Ohmic Region Characteristics
V
DS
– Drain-Source Voltage (V)
1.0
0
1.0
2.0
3.0
4.0
5.0
0.8
0.6
0.4
0.2
0
6 V
5 V
4 V
3 V
2 V
T
J
= 25 C
V
GS
= 10 V
Figure 6.
6a)
Idealized Cross-Section Through an
N-Channel Depletion-Type MOSFET
6b)
Circuit Arrangement for
N-Channel Depletion MOSFET
6c)
Family of Output Characteristics
for N-Channel Depletion MOSFET
6d)
Family of Output Characteristics for
N-Channel Enhancement MOSFET
V
DS
= V
GS
– V
GS(th)
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