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參數(shù)資料
| 型號： | AN10145 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Bi-directional low voltage translators |
| 中文描述： | 雙向低電壓轉(zhuǎn)換器 |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 325K |
| 代理商： | AN10145 |
8
Figure 6 – GTL-TVC Typical Application Circuit
Propagation delay
Propagation delay for the GTL-TVC devices is problematic to define because, like the CBT functions, it is very small
across the transistor. The rise time is dominated by the RC time constant of the node, and the fall time is dominated by
the pull down driver, the total capacitance and the pull up resistor. The propagation delay is normally measured from
the swing on the lower voltage side to the swing on the higher voltage side or vice versa. For a 0 V to 3 V transition on
the input with a 1 ns edge rate to a 0 V to 3 V output, the measurement points on both sides would be 1.5 V and the
propagation delay would be less than 1 ns. However, for a GTL+ to 5 V translation, where the pull up on the 5 V side is
2.2 k
and the total capacitance is 100 pF, the rising edge propagation would be measured from the 1 V point on the
GTL+ side to 2.5 V on the 5 V side and would measure about 95 ns because of the RC time constant.
GTL-TVC Electrical characteristics
The typical electrical characteristics of the GTL-TVC NMOS transistors as measured over temperature using the test
configuration shown in Figure 7 are included in Figures 8 to 13.
Figure 7. GTL-TVC Test Set Up
-2.20E-02
-2.00E-02
-1.80E-02
-1.60E-02
-1.40E-02
-1.20E-02
-1.00E-02
-8.00E-03
-6.00E-03
-4.00E-03
-2.00E-03
0.00E+00
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
VSn (V)
Vsref = 1 V
I
25 deg C
85 deg C
-40 deg C
VDDref = 3.3v
VDDpass = 3.3v
RDn = 150 ohms
RDref = 200k
GND
SREF
GREF
DREF
S1
S2
D2
D1
GTL2002
1.0 V
1.5 V
2.0 V
2.5 V
VSn
VDn
VSREF
VDDREF
VDDpass
RDREF
RDn
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