參數(shù)資料
型號(hào)： Am75PDL193CHHa
廠商： Spansion Inc.
英文描述： 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述： 128兆位（8米× 16位），3.0伏的CMOS只，同步讀/寫閃存
文件頁數(shù)： 68/129頁
文件大?。?/td> 852K
代理商： AM75PDL193CHHA
66
Am75PDL191CHHa/Am75PDL193CHHa
January 14, 2004
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Read-Only Operations – Am29PDL127H
Notes:
1.
Not 100% tested.
2.
See Figure 10 and Table 19 for test specifications
3.
Measurements performed by placing a 50 ohm termination on the
data pin with a bias of V
/2. The time from OE# high to the data
bus driven to V
CC
/2 is taken as t
DF
.
Read-Only Operations – Am29PDL129H
Notes:
1.
Not 100% tested.
2.
See Figure 10 and Table 19 for test specifications
3.
Valid CE#f1/CE#f2 conditions: (CE#f1= V
IL
, CE#f2= V
IH
) or
(CE#f1= V
IH
, CE#f2=V
IL
).
4.
Valid CE#f1/CE#f2 transitions: (CE#f1= CE#f2= V
IH
) to (CE#f1=
V
IL
, CE#f2=V
IH
) or (CE#f1= V
IH
, CE#f2=V
IL
).
5.
Measurements performed by placing a 50 ohm termination on the
data pin with a bias of V
/2. The time from OE# high to the data
bus driven to V
CC
/2 is taken as t
DF
.
Valid CE#f1/CE#f2 transitions: (CE#f1= V
, CE#f2= V
IH
) or
(CE#f1= V
IH
, CE#f2=V
IL
) to (CE#f1= CE#f2= V
IH
).
6.
Parameter
Description
Test Setup
All Speeds
JEDEC
Std.
70
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
70
ns
t
AVQV
t
ACC
Address to Output Delay
CE#f1, OE# = V
IL
Max
70
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
70
ns
t
PACC
Page Access Time
Max
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1, 3)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Notes 1, 3)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE#f1 or
OE#, Whichever Occurs First (Notes 3)
Min
5
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Parameter
Description
Test Setup
All Speeds
JEDEC
Std.
70
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
70
ns
t
AVQV
t
ACC
Address to Output Delay (Note 3)
CE#f1, OE# = V
IL
Max
70
ns
t
ELQV
t
CE
Chip Enable to Output Delay (Note 4)
OE# = V
IL
Max
70
ns
t
PACC
Page Access Time
Max
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Notes 1, 5, 6)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Notes 1, 5)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses,
CE#f1/CE#f2 or OE#, Whichever Occurs First
(Notes 5, 6)
Min
5
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
相關(guān)PDF資料
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AM75PDL193CHHA70I 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
Am75PDL191CHH 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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AM75PDL191CHH70I 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
Am75PDL193CHH 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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