參數(shù)資料
型號(hào)： AM70PDL129BDH85IS
廠(chǎng)商： SPANSION LLC
元件分類(lèi)： 存儲(chǔ)器
英文描述： 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA93
封裝： 13 X 9 MM, FBGA-93
文件頁(yè)數(shù)： 51/128頁(yè)
文件大?。?/td> 918K
代理商： AM70PDL129BDH85IS
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November 25, 2003
Am70PDL127BDH/Am70PDL129BDH
49
A D V A N C E I N F O R M A T I O N
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Write Operation Status section for information
on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardware
reset
immediately
terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 14 section for timing diagrams.
Figure 5.
Erase Operation
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 μs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 20 μs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Word Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the au-
toselect mode, the device reverts to the Erase Sus-
pend mode, and is ready for another valid operation.
Refer to the
Autoselect Command Sequence
sections
for details.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-sus-
pended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
Password Program Command
The Password Program Command permits program-
ming the password that is used as part of the hard-
ware protection scheme. The actual password is
64-bits long. Four Password Program commands are
required to program the password. The system must
enter the unlock cycle, password program command
(38h) and the program address/data for each portion
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 16 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關(guān)PDF資料
PDF描述
AM70PDL129BDH85IT 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL127CDH Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL127CDH66I Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL127CDH66IS Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL127CDH66IT Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM70PDL129BDH85IT 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL129CDH 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL129CDH66I 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL129CDH66IS 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL129CDH66IT 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
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