參數(shù)資料
型號： AM49DL3208GB70FS
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA69
封裝： 8 X 10 MM, FBGA-69
文件頁數(shù)： 50/61頁
文件大小： 904K
代理商： AM49DL3208GB70FS
52
Am49DL3208G
March 12, 2004
ADV ANCE
I N FO RMAT I O N
PSEUDO SRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. WE# = V
IH.
2. t
HZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ (Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than t
RC for continuous periods < 10 s.
Figure 29.
Pseudo SRAM Read Cycle
Data Valid
High-Z
tRC
CE#1s
Address
OE#
Data Out
tOH
tAA
tCO1
tOE
tOLZ
tBLZ
tLZ
tOHZ
tHZ
CE2s
tCO2
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