參數(shù)資料
型號： AM49DL3208GB70FS
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA69
封裝： 8 X 10 MM, FBGA-69
文件頁數(shù)： 32/61頁
文件大?。?/td> 904K
代理商： AM49DL3208GB70FS
36
Am49DL3208G
March 12, 2004
ADV ANCE
I N FO RMAT I O N
PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Notes:
1. T
A= –40
° to 85°C, otherwise specified.
2. Overshoot: V
CC+1.0V if pulse width
≤ 20 ns.
3. Undershoot: –1.0V if pulse width
≤ 20 ns.
4. Overshoot and undershoot are sampled, not 100% tested.
5. Stable power supply required 200 s before device operation.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN = VSS to VCC
–1.0
1.0
A
I
LO
Output Leakage Current
CE1#s = V
IH, CE2s = VIL or OE# =
V
IH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
A
I
CC1s
Average Operating Current
Cycle time = 1 s, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
V
IN ≥ VCC – 0.2 V
35
mA
I
CC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA,
100% duty, CE1#s = V
IL, CE2s =
V
IH, VIN = VIL = or VIH
12
25
mA
V
IL
Input Low Voltage
–0.2
(Note 3)
0.4
V
IH
Input High Voltage
2.2
V
CC+0.2
(Note 2)
V
OL
Output Low Voltage
I
OL = 2.0 mA
0.4
V
OH
Output High Voltage
I
OH = –1.0 mA
2.2
V
I
SB
Standby Current (TTL)
CE1#s = V
IH, CE2 = VIL, Other
inputs = V
IH or VIL
0.3
mA
I
SB1
Standby Current (CMOS)
CE1#s
=V
IH, CE2= VIL:
Other inputs = V
IH or VIL:
t
A = 85°C, VCC = 3.0 V
60
A
I
SB2
Standby Current (CMOS)
CE1#s
=V
IH, CE2= VIL:
Other inputs = V
IH or VIL:
t
A = 85°C, VCC = 3.3 V
85
A
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