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參數資料
| 型號： | AM29PL320DB90 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位/ 1個M × 32位）的CMOS 3.0伏，不僅具備高性能頁面模式閃存 |
| 文件頁數： | 26/50頁 |
| 文件大?。?/td> | 947K |
| 代理商： | AM29PL320DB90 |
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Am29PL320D
October 2, 2003
Temporary Sector Unprotect Enable/Dis-
able Command Sequence
The temporary unprotect command sequence is a
four-bus-cycle operation. The sequence is initiated by
writing two unlock write cycles. A third write cycle sets
up the command. The fourth and final write cycle en-
ables or disables the temporary unprotect feature. If
the temporary unprotect feature is enabled, all sectors
are temporarily unprotected. The system may program
or erase data as needed. When the system writes the
temporary unprotect disable command sequence, all
sectors return to their previous protected or unpro-
tected settings. See Table 13 and Figure 4 for more
information.
Notes:
1. All protected sectors are unprotected. If WP# = V
IL
, the
first or last 64 KByte sector will remain protected.
2. All previously protected sectors are protected once again.
Figure 4.
Temporary Sector Unprotect Algorithm
START
Write Temporary Sector
Unprotect Enable
Command Sequence
Write Temporary Sector
Unprotect Disable
Command Sequence
Perform Erase or
Program Operations
Procedure Complete
(Note 1)
(Note 2)
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| AM29PL320DB70R | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| AM29PL320DT60R | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| AM29PL320DT70 | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| AM29PL320DT70R | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| AM29PL320D | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
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