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參數(shù)資料
| 型號： | AM29PL320DB70RWPI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| 中文描述： | 1M X 32 FLASH 3V PROM, 70 ns, PBGA84 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-84 |
| 文件頁數(shù)： | 3/50頁 |
| 文件大?。?/td> | 947K |
| 代理商： | AM29PL320DB70RWPI |
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Publication#
24075
Issue Date:
October 2, 2003
Rev:
C
Amendment/
+2
Refer to AMD’s Website (www.amd.com/flash) for the latest information.
Am29PL320D
32 Megabit (2 M x 16-Bit/1 M x 32-Bit)
CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
32 Mbit Page Mode device
— Word (16-bit) or double word (32-bit) mode
selectable via WORD# input
— Page size of 8 words/4 double words: Fast page
read access from random locations within the
page
■
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■
Flexible sector architecture
— Sector sizes (x16 configuration): One 16 Kword,
two 8 Kword, one 96 Kword and fifteen 128
Kword sectors
— Supports full chip erase
■
SecSi
(Secured Silicon) Sector region
— Current version of device has 512 words (256
double words); future versions will have 128
words (64 double words)
■
Top or bottom boot block configuration
■
Manufactured on 0.23 μm process technology
■
20-year data retention at 125
°
C
■
Minimum 1 million erase cycles guarantee
per sector
PERFORMANCE CHARACTERISTICS
■
High performance read access times
— Page access times as fast as 20 ns
— Random access times as fast as 60 ns
■
Power consumption (typical values)
— Initial page read current: 4 mA (1 MHz),
40 mA (10 MHz)
— Intra-page read current: 15 mA (10 MHz),
50 mA (33 MHz)
— Program/erase current: 25 mA
— Standby mode current: 2 μA
SOFTWARE FEATURES
■
Software command-set compatible with JEDEC
standard
— Backward compatible with Am29F and Am29LV
families
■
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
■
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
HARDWARE FEATURES
■
Sector Protection
— A hardware method of locking a sector to prevent
any program or erase operations within that
sector
— Sectors can be locked via programming
equipment
— Temporary Sector Unprotect command
sequence allows code changes in previously
locked sectors
■
ACC (Acceleration) input provides faster
programming times
■
WP# (Write Protect) input
— At V
IL
, protects the first or last 32 Kword sector,
regardless of sector protect/unprotect status
— At V
IH
, allows removal of sector protection
— An internal pull up to V
CC
is provided
■
Package Options
— 84-ball FBGA
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