參數(shù)資料
型號(hào)： Am29PDL128G70
廠商： Spansion Inc.
英文描述： 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
中文描述： 128兆位（8米× 16位/ 4米× 32位），3.0伏的CMOS只，同步讀/寫(xiě)閃存與VersatileIO控制記憶
文件頁(yè)數(shù)： 38/69頁(yè)
文件大?。?/td> 1181K
代理商： AM29PDL128G70
July 29, 2002
Am29PDL128G
37
P R E L I M I N A R Y
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank.
Refer to the
Write Operation Status
section for infor-
mation on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardware
reset
immediately
terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the
Erase and Program Operations
ta-
bles in the AC Characteristics section for parameters,
and
Figure 18
section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 μs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 20 μs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation. Addresses are
“
don
’
t-cares
”
when
writing the Erase suspend command.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device
“
erase sus-
pends
”
all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7
–
DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the
Write Operation Status
section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Double Word/Word Program
operation. Refer to the
Write Operation Status
section
for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the au-
toselect mode, the device reverts to the Erase Sus-
pend mode, and is ready for another valid operation.
Refer to the
Autoselect Mode
and
Autoselect Com-
mand Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don
’
t care). The bank address of the erase-sus-
pended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
Figure 4.
Erase Operation
Password Program Command
The Password Program Command permits program-
ming the password that is used as part of the hard-
ware protection scheme. The actual password is
64-bits long. Depending upon the state of the WORD#
pin, multiple Password Program Commands are re-
quired. For a x16 bit data bus, 4 Password Program
commands are required to program the password. For
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Tables
14
and
16
for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關(guān)PDF資料
PDF描述
Am29PDL128G70R 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
Am29PDL128G80 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
Am29PDL128G90 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
AM29PDL640G High Speed CMOS Logic 4-Bit Binary Full Adder with Fast Carry 16-CDIP -55 to 125
AM29PDL310G98WHI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29PDL128G70RPEI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16/4M X 32 70NS 80FBGA - Trays
AM29PDL128G80PEF 制造商:Spansion 功能描述:SPZAM29PDL128G80PEF 128M FLASH EOL100409
AM29PL141BXA 制造商:AMD 功能描述:*
AM29PL141DC 制造商:Advanced Micro Devices 功能描述:USER PROGRAMMABLE SPECIAL FUNCTION ASIC, 28 Pin, DIP
AM29PL160CB-90SF 制造商:Advanced Micro Devices 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*