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參數(shù)資料
| 型號： | AM29LV800T |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存 |
| 文件頁數(shù)： | 33/48頁 |
| 文件大?。?/td> | 207K |
| 代理商： | AM29LV800T |
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Am29LV800T/Am29LV800B
33
P R E L I M I N A R Y
AC CHARACTERISTICS
Write (Erase/Program) Operations
Notes:
1. The duration of the program or erase operation is variable and is calculated in the internal algorithms.
2. Note 100% tested.
Parameter Symbols
-90R
-100
-120
-150
JEDEC
Standard
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 2)
Min
90
100
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
50
50
50
65
ns
t
DVWH
t
DS
Data Setup Time
Min
50
50
50
65
ns
t
WHDX
t
DH
Data Hold Time
Min
0
0
0
0
ns
t
OES
Output Enable Setup Time (Note 2)
Min
0
0
0
0
ns
t
OEH
Output Enable
Hold TIme
Read (Note 2)
Min
0
0
0
0
ns
Toggle and Data Polling
(Note 2)
Min
10
10
10
10
ns
t
GHWL
t
GHWL
Read Recovery TIme Before Write
(OE High to WE Low)
Min
0
0
0
0
ns
t
ELWL
t
CS
CE Setup TIme
Min
0
0
0
0
ns
t
WHEH
t
CH
CE Hold TIme
Min
0
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
50
50
50
65
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
30
30
35
ns
t
WHWH1
t
WHWH1
Programming Operation
Byte
Typ
9
9
9
9
μ
s
Word
Typ
11
11
11
11
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
Typ
1
1
1
1
sec
t
VCS
V
CC
Setup TIme
Min
50
50
50
50
μ
s
t
RB
Write Recovery Time from RY/BY
Min
0
0
0
0
ns
t
RH
RESET High Time Before Read
Min
50
50
50
50
ns
t
RPD
RESET To Power Down Time
Min
20
20
20
20
μ
s
t
BUSY
Program/Erase Valid to RY/BY Delay
Min
90
90
90
90
ns
t
ELFL/
t
ELFH
CE to BYTE Switching Low or High
Max
5
5
5
5
ns
t
FLQZ
BYTE Switching Low to Output HIGH Z
Min
30
30
40
40
ns
t
FHQV
BYTE Switching High to Output Active
Min
30
30
40
40
ns
t
VIDR
Rise TIme to V
ID
Min
500
500
500
500
ns
t
RP
RESET Pulse Width
Min
500
500
500
500
ns
t
RRB
RESET Low to RY/BY High
Max
20
20
20
20
μ
s
t
RSP
RESET Setup Time for Temporary Sector
Unprotect
Min
4
4
4
4
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV800T-100 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| AM29LV800BB-120WBK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800BB-120ED | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800BB-120EF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800BB-120EK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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| AM29PL141BXA | 制造商:AMD 功能描述:* |
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