- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366528 > AM29LV800DT-120ED (ADVANCED MICRO DEVICES INC) Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29LV800DT-120ED |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| 中文描述： | 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁(yè)數(shù)： | 23/51頁(yè) |
| 文件大?。?/td> | 1628K |
| 代理商： | AM29LV800DT-120ED |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)當(dāng)前第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)
January 21, 2005 Am29LV800D_00_A4_E
Am29LV800D
21
P R E L I M I N A R Y
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 1. Erase Operation
Table 5. Am29LV800D Command Definitions
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Command
Sequence
(Note 1)
Bus Cycles (Notes 2-5)
Third
Addr
Data
First
Second
Addr
Fourth
Addr
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
AAA
Data
RD
F0
Data
Data
Addr Data
Addr
Data
Read (Note 6)
Reset (Note 7)
1
1
Manufacturer ID
Byte
Word
Byte
Word
Byte
4
AA
2AA
555
2AA
555
2AA
555
55
555
AAA
555
AAA
555
AAA
90
X00
01
Device ID,
Top Boot Block
4
AA
55
90
X01
X02
X01
X02
(SA)
X02
22DA
DA
225B
5B
XX00
XX01
00
01
Device ID,
Bottom Boot Block
4
AA
55
90
Sector Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
Byte
AAA
555
AAA
(SA)
X04
Program
Word
Byte
Word
Byte
4
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
555
AAA
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program (Note
10)
Unlock Bypass Reset (Note
11)
2
XXX
A0
PA
PD
2
XXX
90
XXX
00
C
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29N323D | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29N323DT11AWKI | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| Am29PDS322D | High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-CDIP -55 to 125 |
| Am29PDS322DT10 | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
| Am29PDS322DB10 | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800DT-120WBI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays |
| AM29LV800DT-70SI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Rail/Tube |
| AM29LV800DT70WBI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800DT-70WBI\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 48FBGA - Tape and Reel |
| AM29LV800DT-70WBI\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 48FBGA - Tape and Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。