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參數(shù)資料
| 型號： | Am29F004B-T-70JE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 4/37頁 |
| 文件大小： | 993K |
| 代理商： | AM29F004B-T-70JE |
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Am29F004B
8/5/05
A D V A N C E I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29F004B is a 4 Mbit, 5.0 volt-only Flash memory
device organized as 524,288 bytes. The data appears on
DQ0–DQ7. The device is offered in a 32-pin PLCC package.
This device is designed to be programmed in-system with the
standard system 5.0 volt V
CC
supply. A 12.0 volt V
PP
is not
required for program or erase operations. The device can also
be programmed in standard EPROM programmers.
The device offers access times of 70, 90, and 120 ns, allowing
high speed microprocessors to operate without wait states.
To eliminate bus contention each device has separate chip
enable (CE#), write enable (WE#) and output enable (OE#)
controls.
Each device requires only a
single 5.0 volt power supply
for
both read and write functions. Internally generated and regu-
lated voltages are provided for the program and erase
operations.
The Am29F004B is entirely command set compatible with the
JEDEC single-power-supply Flash standard
. Commands
are written to the command register using standard micropro-
cessor write timing. Register contents serve as inputs to an
internal state-machine that controls the erase and program-
ming circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase operations.
Reading data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded Program
algorithm-an internal algorithm that automatically times the
program pulse widths and verifies proper cell margin.
Device erasure occurs by executing the erase command
sequence. This initiates the
Embedded Erase
algorithm–an
internal algorithm that automatically preprograms the array (if it
is not already programmed) before executing the erase opera-
tion. During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase
operation is complete by reading the DQ7 (Data# Polling), or
DQ6 (toggle)
status bits
. After a program or erase cycle is
completed, the device is ready to read array data or accept
another command.
The
sector erase architecture
allows memory sectors to be
erased and reprogrammed without affecting the data con-
tents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write operations during
power transitions.
The
hardware sector
protection feature dis-
ables
both program and erase operations in any combination
of sectors of memory. This can be achieved in-system or via
programming equipment.
The
Erase Suspend
feature enables the user to put erase on
hold for any period of time to read data from, or program data
to, any sector that is not selected for erasure. True back-
ground erase can thus be achieved.
The device offers a
standby mode
as a power-saving fea-
ture. Once the system places the device into the standby
mode power consumption is greatly reduced.
AMD’s Flash technology combines years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electri-
cally erases all bits within a sector simultaneously via Fowler-
Nordheim tunnelling. The data is programmed using hot elec-
tron injection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F004B-T-70JF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-B-70JK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F004B-T-70JK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F010-90DGC1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010 | 制造商:Panasonic Industrial Company 功能描述:IC |
| AM29F010-120DGC1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGE1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (EXTEND TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGI1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (INDUSTRIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
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