參數(shù)資料
型號(hào)： Am29F004B-T-70JE
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512畝× 8位）的CMOS 5.0伏，只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 24/37頁(yè)
文件大?。?/td> 993K
代理商： AM29F004B-T-70JE
22
Am29F004B
8/5/05
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
2.
Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
The I
CC
current listed is typically less than 2 mA/MHz, with OE#
at V
IH
.
3.
I
CC
active while Embedded Erase or Embedded Program is in
progress.
Not 100% tested.
I
CC3
= 20 μA max at extended temperature (>+85
°
C).
4.
5.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, Input Load Current (Note
4)
V
CC
= V
CC max
;
A9, OE# = 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
CE# = V
IL
,
OE#
= V
IH
20
30
mA
I
CC2
V
CC
Active Write Current
(Notes 1, 3, 4)
CE# = V
IL
,
OE# = V
IH
30
40
mA
I
CC3
V
CC
Standby Current
(Notes 1, 5)
CE# = V
CC
±
0.5 V
0.3
5
μA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
相關(guān)PDF資料
PDF描述
Am29F004B-T-70JF 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-B-70JK 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-T-70JI 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F004B-T-70JK 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F010-90DGC1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
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