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參數(shù)資料
| 型號： | Am29F004B-T-70JE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 34/37頁 |
| 文件大小： | 993K |
| 代理商： | AM29F004B-T-70JE |
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32
Am29F004B
8/5/05
A D V A N C E I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25
°
C, 5.0 V V
CC
, 1,000,000 cycles. Additionally, programming typicals
assume checkerboard pattern.
Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum program times listed.
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table for further
information on command definitions.
The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
2.
3.
4.
5.
6.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time.
PLCC PIN CAPACITANCE
Notes:
1.
2.
Sampled, not 100% tested.
Test conditions T
A
= 25
°
C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
8
s
Byte Programming Time
7
300
μs
Excludes system level overhead
(Note 5)
Chip Programming Time (Note 3)
3.6
10.8
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9 and OE#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Conditions
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
4
6
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
12
pF
C
IN2
Control Pin Capacitance
V
PP
= 0
8
12
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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