參數(shù)資料
型號(hào)： AM29DL640D35EFN
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述： 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同步讀/寫閃存
文件頁數(shù)： 54/54頁
文件大?。?/td> 655K
代理商： AM29DL640D35EFN
52
Am29DL640D
December 13, 2005
Revision C (January 10, 2003)
Package Options
Removed the 64-ball Fortified BGA package and
pinout.
Sector/Sector Block Protection and Unprotection
Change wording of first sentence of third paragraph.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address.
Revision C+1 (October 7, 2004)
Cover Sheet and Title Page
Added notation to superseding documents.
Revision C+2 (January 11, 2005)
Ordering Information and Valid Combinations
Added Pb-free package options.
Updated cross-references.
Changed SecSi to Selected Silicon
Removed Sales Office Listing
Revision C+3 (December 13, 2005)
This product has been retired and is not available for
designs. Availability of this document is retained for
reference and historical purposes only.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor de-
vices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design mea-
sures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright 2001 – 2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
AM29DL640D120WHE 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHEN 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHI 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHIN 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
Am29DL640D90 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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