參數(shù)資料
型號(hào): AM29DL640D35EFN
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述: 64兆位(8米× 8位/ 4米x 16位),3.0伏的CMOS只,同步讀/寫閃存
文件頁(yè)數(shù): 38/54頁(yè)
文件大?。?/td> 655K
代理商: AM29DL640D35EFN
36
Am29DL640D
December 13, 2005
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See
Figure 12
and
Table 14
for test specifications
3. Measurements performed by placing a 50
Ω
termination on the data pin with a bias of V
CC
/2. The time from OE# high to the
data bus driven to V
CC
/2 is taken as t
DF
.
Parameter
Description
(Notes)
Test Setup
Speed Options
JEDEC
Std.
90
120
Unit
t
AVAV
t
RC
Read Cycle Time (
1
)
Min
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (
1
,
3
)
Max
30
ns
t
GHQZ
t
DF
Output Enable to Output High Z (
1
,
3
)
Max
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
t
OEH
Output Enable
Hold Time (
1
)
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
Figure 14.
Read Operation Timings
相關(guān)PDF資料
PDF描述
AM29DL640D120WHE 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHEN 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHI 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHIN 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
Am29DL640D90 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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