參數(shù)資料
型號(hào)： AM29DL640D35EFN
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述： 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同步讀/寫閃存
文件頁數(shù)： 53/54頁
文件大小： 655K
代理商： AM29DL640D35EFN
December 13, 2005
Am29DL640D
51
REVISION SUMMARY
Revision A (March 5, 2001)
Initial release.
Revision A+1 (March 9, 2001)
Ordering Information
Corrected FBGA package marking to include “V” des-
ignation. Deleted “0” from 120 ns package marking.
Revision B (August 10, 2001)
Global
Replaced the phrase “outermost 8 Kb sectors” with the
actual sector names (sectors 0, 1, 140, and 141) for
greater clarity. Changed data sheet status from “Ad-
vance Information” to “Preliminary”.
Block Diagram
Corrected address bus callout from A20 to A21.
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
Deleted references to top and bottom boot devices.
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
Deleted reference to 64 Kbyte SecSi Sector.
Table 4, SecSi Sector Addresses
Added table.
Table 5, Am29DL640D Autoselect Codes, (High
Voltage Method)
Deleted rows for byte mode.
Table 7, WP#/ACC Modes
Added table for clarity.
Revision B+1 (August 30, 2001)
Autoselect Command Sequence
Deleted explanatory bullets and included references to
the appropriate tables for autoselect functions.
Table 12, Am29DL640D Command Definitions
Added second and third read cycle information for the
autoselect device ID command sequence.
AC Characteristics:
Erase and Program Operations
Changed t
BUSY
specification from minimum to
maximum.
Revision B+2 (October 11, 2001)
Connection Diagrams, Ordering Information,
Physical Dimensions
Added 64-ball Fortified BGA package information.
Revision B+3 (November 5, 2001)
Global
Removed Preliminary designation from document.
Ordering Information
Corrected BGA part numbers and markings.
Distinctive Characteristics
Corrected accelerated programming specification.
Device Bus Operations
Added Table 3, Bank Address.
Table 10, Device Geometry Definition
Added definition for address 4Fh.
Revision B+4 (April 15, 2002)
Ordering Information
Added P designator to package marking for Fortified
BGA package.
Revision B+5 (August 19, 2002)
Distinctive Characteristics
Corrected erase cycles.b
Connection Diagram
Changed all references to RFU to NC.
Table 2. Am29DL640D Sector Architecture
Corrected SA20 and SA21 sector’s, sector address to
0001101xxx and 0001110xxx.
Corrected SA35 sector’s, sector address to
0011100xxx.
DC Characteristics Table
Deleted the I
ACC
specification row.
Command Definitions
Modified the last sentence in the first paragraph.
CFI
Changed the text at the end of the last sentence in the
third paragraph to: “reading array data.”
相關(guān)PDF資料
PDF描述
AM29DL640D120WHE 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHEN 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHI 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
AM29DL640D120WHIN 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
Am29DL640D90 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29DL640G70EI 制造商:Advanced Micro Devices 功能描述:
AM29DL800BB-120WBD 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 120ns 48-Pin FBGA
AM29DL800BB-70SI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Trays
AM29DL800BB-90EI 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP
AM29DL800BT-120EC 制造商:Spansion 功能描述:SPZAM29DL800BT-120EC TB 120n EOL160610
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