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參數(shù)資料
| 型號： | AM29DL640D35EF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同步讀/寫閃存 |
| 文件頁數(shù)： | 3/54頁 |
| 文件大小： | 655K |
| 代理商： | AM29DL640D35EF |
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Publication#
23695
Issue Date:
December 13, 2005
Rev:
C
Amendment/
3
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL640D
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
Flexible Bank
TM
architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
Manufactured on 0.23 μm process technology
Secured Silicon Sector: Extra 256 Byte sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable:
Can be read or programmed just
like other sectors. Once locked, data cannot be
changed
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PACKAGE OPTIONS
63-ball Fine Pitch BGA
■
48-pin TSOP
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast as 90 ns
— Program time: 4 μs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per
sector
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
Supports Common Flash Memory Interface (CFI)
Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow
programming/erasing in same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This product has been retired and is not available for designs.
For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet
for specifications and ordering information.
For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL064J supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the
S29PL064J Datasheet for specifications and ordering information.
Availability of this document is retained for reference and historical purposes only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DL640D35EFN | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640D120WHE | 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640D120WHEN | 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640D120WHI | 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM29DL640D120WHIN | 64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL640G70EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL800BB-120WBD | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 120ns 48-Pin FBGA |
| AM29DL800BB-70SI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Trays |
| AM29DL800BB-90EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP |
| AM29DL800BT-120EC | 制造商:Spansion 功能描述:SPZAM29DL800BT-120EC TB 120n EOL160610 |
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