參數(shù)資料
型號(hào)： AM29BDS64HE9VFI
廠商： Spansion Inc.
英文描述： 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 128或64兆位（8米或4個(gè)M x 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 88/89頁(yè)
文件大?。?/td> 913K
代理商： AM29BDS64HE9VFI
86
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A T A S H E E T
PHYSICAL DIMENSIONS
VBD064—64-ball Fine-Pitch Ball Grid Array (BGA) 9 x 8 mm Package
Note:
BSC is an ANSI standard for Basic Space Centering
3246 \ 16-038.9
PACKAGE
VBD 064
JEDEC
N/A
8.95 mm x 7.95 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.20
---
0.30
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
8.95 BSC.
BODY SIZE
E
7.95 BSC.
BODY SIZE
D1
5.60 BSC.
BALL FOOTPRINT
E1
5.60 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
8
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
64
TOTAL BALL COUNT
0.30
0.35
0.40
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
NONE
DEPOPULATED SOLDER BALLS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
SIDE VIEW
A2
A
SEATING PLANE
C
C
C
0.10
0.08
A1
TOP VIEW
10
C
(2X)
0.05
(2X)
C
0.05
A
B
INDEX MARK
CORNER
PIN A1
E
D
BOTTOM VIEW
A1 CORNER
SD
SE
7
E1
e
D1
A B
NX
φ
b
M
φ
0.15
φ
0.08 M
C
C
6
G
H
8
7
6
5
4
3
2
1
B
A
D
C
E
F
相關(guān)PDF資料
PDF描述
AM29BDS64HE9VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE9VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS320GTD4VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS320GBC3VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS320GBC4VMI 32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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