參數(shù)資料
型號: AM29BDS640GTD9WSI
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80
封裝: 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁數(shù): 51/65頁
文件大小: 899K
代理商: AM29BDS640GTD9WSI
50
Am29BDS640G
October 31, 2002
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid
Address for reading status bits.
2. “In progress” and “complete” refer to status of program
operation.
3. A21–A12 are don’t care during command sequence
unlock cycles.
4. The Asynchronous programming operation is
independent of the Set Device Read Mode bit in the Burst
Mode Configuration Register.
Figure 22.
Alternate Asynchronous Program Operation Timings
OE#
CE#
Data
Addresses
AVD#
WE#
CLK
V
CC
555h
PD
t
AS
t
AVSW
t
AVHW
t
CHW
t
AH
t
WC
t
WPH
PA
t
VCS
t
WP
t
DH
t
CH
In
Progress
t
WHWH1
VA
Complete
VA
Program Command Sequence (last two cycles)
Read Status Data
t
DS
V
IH
V
IL
t
AVDP
A0h
t
CS
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