- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375289 > AM29BDS640GTD9WSI (SPANSION LLC) 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29BDS640GTD9WSI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁數(shù)： | 36/65頁 |
| 文件大小： | 899K |
| 代理商： | AM29BDS640GTD9WSI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁當(dāng)前第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁
October 31, 2002
Am29BDS640G
35
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Note:
1. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
2. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for t
ACC
+ 60 ns. Typical sleep mode current is equal to I
CC3
.
Parameter Description
Test Conditions (Note 1)
Min
Typ.
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
CCB
V
CC
Active Burst Read Current
CE# = V
IL
, OE# = V
IH
, WE# = V
IH,
54 MHz
10
20
mA
CE# = V
IL
, OE# = V
IH
, WE# = V
IH,
40 MHz
8
16
mA
I
IO
V
IO
Non-active Output
V
IO
= 1.8 V, OE# = V
IH
0.2
10
μA
V
IO
= 3.0 V, OE# = V
IH
0.2
10
μA
I
CC1
V
CC
Active Asynchronous Read
Current (Note 2)
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
5 MHz
12
16
mA
1 MHz
3.5
5
mA
I
CC2
V
CC
Active Write Current (Note 3)
CE# = V
IL
, OE# = V
IH
, V
PP
= V
IH
15
40
mA
I
CC3
V
CC
Standby Current (Note 4)
CE# = RESET# = V
CC
± 0.2 V
0.2
10
μA
I
CC4
V
CC
Reset Current
RESET# = V
IL,
CLK = V
IL
0.2
10
μA
I
CC5
V
CC
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IH
25
60
mA
V
IL
Input Low Voltage
V
IO
= 1.8 V
–0.5
0.2
V
V
IO
= 3.0 V
–0.5
0.4
V
V
IH
Input High Voltage
V
IO
= 1.8 V
V
IO
– 0.2
V
IO
+ 0.2
V
V
IO
= 3.0 V
V
IO
– 0.4
V
IO
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC
min
,
V
IO
= V
IO min
0.1
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC
min
,
V
IO
= V
IO min
V
IO
– 0.1
V
V
ID
Voltage for Accelerated Program
11.5
12.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.0
1.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDS640GTD8WSI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS643GT7MVAI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS643GT5GVAI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS643GT5KVAI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS643GT5MVAI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BDS643GT5KVAI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays |
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM29C10AWW DIE | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。