- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄166211 > AM29BDS640GBC8WSI (SPANSION LLC) 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29BDS640GBC8WSI |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 20 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁數(shù)： | 72/77頁 |
| 文件大小： | 1581K |
| 代理商： | AM29BDS640GBC8WSI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁當前第72頁第73頁第74頁第75頁第76頁第77頁
72
Am29BDS640G
25903C2 May 9, 2006
Data
Sheet
Physical Dimensions
FBE080—80-ball Fine-Pitch Ball Grid Array (FBGA)
11 x 12 mm Package
Note: BSC is an ANSI standard for Basic Space Centering.
D
A
A2
eD
D1
E1
SE
SD
eE
0.20 (4X)
A1 CORNER INDEX MARK
A1 CORNER
A1
SEATING PLANE
10
6
7
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
E
B
Z
0.08
Z
0.25
Z
ZA B
φ0.08
φ0.15
M
NXOb
A
B
C
D
E
F
G
H
J
K
L
M
7
6
5
4
3
2
1
8
A3-A6, B3-B6,
L3-L6, M3-M6
N/A
10.95 mm x 11.95 mm
PACKAGE
FBE 080
NOM.
---
1.20
---
0.94
MAX.
10.95 BSC.
11.95 BSC.
12
---
MIN.
0.84
0.20
8.80 BSC.
5.60 BSC.
8
80
0.30
0.35
0.40 BSC.
E
0.25
0.80 BSC.
ME
D
JEDEC
PACKAGE
SYMBOL
A
A2
A1
MD
D1
E
E1
b
N
NOTE
PACKAGE OUTLINE TYPE
ROW MATRIX SIZE E DIRECTION
BALL FOOTPRINT
BALL PITCH
SOLDER BALL PLACEMENT
BODY SIZE
BALL HEIGHT
BODY SIZE
BODY THICKNESS
OVERALL THICKNESS
BALL DIAMETER
ROW MATRIX SIZE D DIRECTION
TOTAL BALL COUNT
BALL FOOTPRINT
DEPOPULATED SOLDER BALLS
e
SD / SE
3150\38.9G
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D"
DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE
IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER
BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM Z.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER
OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D
OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
8.
"+" IN THE PACKAGE DRAWING INDICATES THE THEORETICAL
CENTER OF DEPOPULATED BALLS.
9
FOR PACKAGE THICKNESS, "A" IS THE CONTROLLING DIMENSION.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, INK MARK,
METALLIZED MARKINGS INDENTION OR OTHER MEANS.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDS640GBC9WSI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS640GBD3WSI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS640GBD4WSI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS640GBD8WSI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29BDS640GBD9WSI | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BDS643GT5KVAI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays |
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM29C10AWW DIE | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。