參數(shù)資料
型號(hào): AM29BDS640GBC8WSI
廠商: SPANSION LLC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 20 ns, PBGA80
封裝: 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁數(shù): 68/77頁
文件大小: 1581K
代理商: AM29BDS640GBC8WSI
68
Am29BDS640G
25903C2 May 9, 2006
Data
Sheet
AC Characteristics
Notes:
1. RDY active with data (A18 = 1 in the Burst Mode Configuration Register).
2. RDY active one clock cycle before data (A18 = 0 in the Burst Mode Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device
crossing a bank in the process of performing an erase or program.
Figure 31. Latency with Boundary Crossing
into Program/Erase Bank
CLK
Address (hex)
C60
C61
C62
C63
C64
D60
D61
D62
D63
Read Status
(stays high)
AVD#
RDY
Data
OE#,
CE#
(stays low)
Address boundary occurs every 64 words, beginning at address
00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing
3C
3D
3E
3F
40
latency
RDY
latency
tRACC
(Note 1)
(Note 2)
tRACC
Invalid
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