參數(shù)資料
型號(hào): AM29BDS640GBC8WSI
廠商: SPANSION LLC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 20 ns, PBGA80
封裝: 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁數(shù): 45/77頁
文件大小: 1581K
代理商: AM29BDS640GBC8WSI
May 9, 2006 25903C2
Am29BDS640G
3
Data
Sheet
The sector erase architecture allows memory sectors to be erased and reprogrammed
without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically in-
hibits write operations during power transitions. The device also offers two types of data
protection at the sector level. The sector lock/unlock command sequence disables or
re-enables both program and erase operations in any sector. When at VIL, WP# locks
sectors 0 and 1 (bottom boot device) or sectors 132 and 133 (top boot device).
The device offers two power-saving features. When addresses have been stable for a
specified amount of time, the device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in
both modes.
Spansion flash technology combines years of flash memory manufacturing experience to
produce the highest levels of quality, reliability and cost effectiveness. The device electri-
cally erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The
data is programmed using hot electron injection.
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AM29BDS640GBC9WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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AM29BDS640GBD4WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS640GBD8WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS640GBD9WSI 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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