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參數(shù)資料
| 型號： | AM29BDS640G |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 22/65頁 |
| 文件大?。?/td> | 899K |
| 代理商： | AM29BDS640G |
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Am29BDS640G
October 31, 2002
AD V A NCE
INF O R M A T IO N
DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on
these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard program operation. Refer to the
“Write Operation Status” section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
sections for details.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
Figure 3.
Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note: See Table 14 for program command sequence.
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