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參數(shù)資料
| 型號： | AM29BDS640G |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 12/65頁 |
| 文件大?。?/td> | 899K |
| 代理商： | AM29BDS640G |
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ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 25903
Rev: B Amendment+0
Issue Date: October 31, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29BDS640G
64 Megabit (4 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single 1.8 volt read, program and erase (1.65 to 1.95
volt)
■ Manufactured on 0.17 m process technology
■ Enhanced VersatileIO (VIO) Feature
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the VIO pin
— 1.8V and 3V compatible I/O signals
■ Simultaneous Read/Write operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture: 16Mb/16Mb/16Mb/16Mb
■ Programmable Burst Interface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with wrap-around
— Continuous Sequential Burst
■ Sector Architecture
— Eight 8 Kword sectors and one hundred twenty-six 32
Kword sectors
— Banks A and D each contain four 8 Kword sectors
and thirty-one 32 Kword sectors; Banks B and C
each contain thirty-two 32 Kword sectors
— Eight 8 Kword boot sectors, four at the top of the
address range, and four at the bottom of the address
range
■ Minimum 1 million erase cycle guarantee per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ 80-ball FBGA package
PERFORMANCE CHARCTERISTICS
■ Read access times at 54/40 MHz (at 30 pF)
— Burst access times of 13.5/20 ns
— Asynchronous random access times of 70 ns
— Initial Synchronous access times as fast as 87.5/95 ns
■ Power dissipation (typical values, CL = 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 A
HARDWARE FEATURES
■ Sector Protection
— Software command sector locking
■ Reduced Wait-State Handshaking feature available
— Provides host system with minimum possible latency
by monitoring RDY
■ Hardware reset input (RESET#)
— Hardware method to reset the device for reading array
data
■ WP# input
— Write protect (WP#) function protects sectors 0 and 1
(bottom boot), or sectors 132 and 133 (top boot),
regardless of sector protect status
■ ACC input: Acceleration function reduces
programming time; all sectors locked when ACC = VIL
■ CMOS compatible inputs, CMOS compatible outputs
■ Low VCC write inhibit
SOFTWARE FEATURES
■ Supports Common Flash Memory Interface (CFI)
■ Software command set compatible with JEDEC 42.4
standards
— Backwards compatible with Am29F and Am29LV
families
■ Data# Polling and toggle bits
— Provides a software method of detecting program
and erase operation completion
■ Erase Suspend/Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
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