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| 型號： | Am29BDD160GB65A |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存 |
| 文件頁數(shù)： | 72/80頁 |
| 文件大?。?/td> | 3476K |
| 代理商： | AM29BDD160GB65A |
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Am29BDD160G
1.
2.
complete, the toggle bits will stop toggling.
3.
RDY is active with data (A18 = 0 in the Configuration Register). When A18 = 1 in the Configuration Register, RDY is active
one clock cycle before data.
4.
Data polling requires burst access time delay.
The timings are similar to synchronous read timings and asynchronous data polling Timings/Toggle bit Timing.
VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is
Figure 27. Synchronous Data Polling Timing/Toggle Bit Timing
* Valid address for sector protect: A6 = 0, A1 = 1, A0 = 0. Valid address for sector unprotect:A6 = 1, A1 = 1, A0 = 0.
** Command for sector protect is 68h. Command for sector unprotect is 60h.
*** Command for sector protect verify is 48h. Command for sector unprotect verify is 40h.
Figure 28. Sector Protect/Unprotect Timing Diagram
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