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| 型號(hào)： | AM29BDD160GB17DPBE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動(dòng)，同步讀/寫(xiě)閃存 |
| 文件頁(yè)數(shù)： | 56/79頁(yè) |
| 文件大?。?/td> | 1368K |
| 代理商： | AM29BDD160GB17DPBE |
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54
Am29BDD160G
June 7, 2006
DC CHARACTERI
S
TIC
S
CMO
S
Compat
i
ble
Notes:
1
.
2
.
3
.
4
.
The I
CC
c
u
rrent l
is
ted
i
ncl
u
de
s
b
oth the DC oper
a
t
i
ng c
u
rrent
a
nd the fre
qu
ency dependent component
.
I
CC
a
ct
i
ve wh
i
le Em
b
edded Er
as
e or Em
b
edded Progr
a
m
is
i
n progre
ss.
Not 100% te
s
ted
.
M
a
x
i
m
u
m I
CC
s
pec
i
f
i
c
a
t
i
on
s
a
re te
s
ted w
i
th V
CC
= V
CCm
a
x
.
C
u
rrent m
a
x
i
m
u
m h
as
b
een
i
ncre
as
ed
si
gn
i
f
i
c
a
ntly from d
a
t
as
heet Rev
isi
on B+4, D
a
ted Apr
i
l 8, 2003
.
5
.
Parameter
De
s
cr
i
pt
i
on
Te
s
t Cond
i
t
i
on
s
M
i
n
Typ
Max
Un
i
t
I
LI
Inp
u
t Lo
a
d C
u
rrent
V
IN
= V
SS
to V
IO
, V
IO
= V
IO m
a
x
±
1
.
0
μ
A
I
LIWP
Inp
u
t Lo
a
d C
u
rrent, WP#
V
IN
= V
SS
to V
IO
, V
IO
= V
IO m
a
x
–25
μ
A
I
LO
O
u
tp
u
t Le
a
k
a
ge C
u
rrent
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC m
a
x
±
1
.
0
μ
A
I
CCB
V
CC
Act
i
ve B
u
r
s
t Re
a
d C
u
rrent
(Note 1)
CE# = V
IL
,
OE# = V
IL
56 MHz
8
Do
ub
le-Word
70
9
0
mA
66 MHz
I
CC1
V
Act
i
ve A
s
ynchrono
us
Re
a
d C
u
rrent
(Note 1)
CE# = V
IL
,OE# = V
IL
1 MHz
4
mA
I
CC
3
V
CC
Act
i
ve Progr
a
m C
u
rrent (Note
s
2, 4) CE# = V
IL
,OE# = V
IH
, ACC = V
IH
40
50
mA
I
CC4
V
CC
Act
i
ve Er
as
e C
u
rrent (Note
s
2, 4)
CE# = V
IL
,OE# = V
IH
, ACC = V
IH
20
50
mA
I
CC5
(Note 5)
V
CC
S
t
a
nd
b
y C
u
rrent (CMO
S
)
V
CC
= V
CC m
a
x
, CE# = V
CC
±
0
.3
V
60
μ
A
I
CC6
V
CC
Act
i
ve C
u
rrent (Re
a
d Wh
i
le Wr
i
te)
CE# = V
IL
,OE# = V
IL
3
0
9
0
mA
I
CC7
(Note 5)
V
CC
Re
s
et C
u
rrent
RE
S
ET# = V
IL
60
μ
A
I
CC
8
(Note 5)
A
u
tom
a
t
i
c
S
leep Mode C
u
rrent
V
IH
= V
CC
±
0
.3
V, V
IL
= V
SS
±
0
.3
V
60
μ
A
I
ACC
V
ACC
Acceler
a
t
i
on C
u
rrent
ACC = V
HH
20
mA
V
IL
Inp
u
t Low Volt
a
ge
–0
.
5
0
.3
x V
IO
V
V
IH
Inp
u
t H
i
gh Volt
a
ge
0
.
7 x V
IO
3.
6
V
V
ILCLK
CLK Inp
u
t Low Volt
a
ge
–0
.
2
0
.3
x V
IO
V
V
IHCLK
CLK Inp
u
t H
i
gh Volt
a
ge
0
.
7 x V
CC
2
.
75
V
V
ID
Volt
a
ge for A
u
to
s
elect
V
CC
= 2
.
5 V
11
.
5
12
.
5
V
V
OL
O
u
tp
u
t Low Volt
a
ge
I
OL
= 4
.
0 mA, V
CC
= V
CC m
i
n
0
.
45
V
I
OLRB
RY/BY#, O
u
tp
u
t Low C
u
rrent
V
OL
= 0
.
4 V
8
mA
V
HH
Acceler
a
ted (ACC p
i
n) H
i
gh Volt
a
ge
I
OH
= –2
.
0 mA, V
CC
= V
CC m
i
n
0
.8
5 x V
CC
V
V
OH
O
u
tp
u
t H
i
gh Volt
a
ge
I
OH
= –100
μ
A, V
CC
= V
CC m
i
n
V
IO
–0
.
1
V
V
LKO
Low V
CC
Lock-O
u
t Volt
a
ge (Note
3
)
1
.
6
2
.
0
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDD160GB17DPBF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DPBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17DPBK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20AKE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB20AKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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